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1. product profile 1.1 general description 270 w ldmos power transistor for base st ation applications at frequencies from 2110 mhz to 2170 mhz. [1] 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; 5 mhz carrier spacing. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for broadband operation ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for base stations and mu lti carrier applications in the 2110 mhz to 2170 mhz frequency range BLF8G22LS-270 power ldmos transistor rev. 3 ? 20 december 2012 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 2400 28 80 17.7 30 ? 29 [1]
BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 2 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability. 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain 2gate 3source [1] 3 2 1 sym112 1 3 2 table 3. ordering information type number package name description version BLF8G22LS-270 - earless flanged ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l =80w; v ds =28v; i dq = 2400 ma 0.26 k/w
BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 3 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLF8G22LS-270 is capable of withstand ing a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 2400 ma; p l = 270 w (cw); f = 2110 mhz. 7.2 impedance information table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 4.5 ma 65 - - v v gs(th) gate-source threshold voltage v ds =20 v; i d = 450 ma 1.5 1.8 2.3 v v gsq gate-source quiescent voltage v ds =28 v; i d = 2400 ma 1.7 2.1 2.5 v i dss drain leakage current v gs =0v; v ds =28v - - 4.2 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =20v -80- a i gss gate leakage current v gs =11 v; v ds =0v - - 420 na g fs forward transconductance v ds =20v; i d = 15.75 ma - 3.8 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 15.75 a -0.04- ? table 7. rf characteristics test signal: 2-carrier w-cdma; par = 8.4 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1-64 dpch; f 1 =2112.5mhz; f 2 =2117.5mhz; f 3 = 2162.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds =28v; i dq = 2400 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 80 w 16.5 17.7 - db rl in input return loss p l(av) =80w - ? 17 ? 7db ? d drain efficiency p l(av) =80w 26 30 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) =80w - ? 29 ? 26.5 dbc table 8. typical impedance information i dq = 2400 ma; main transistor v ds =28v. z s and z l defined in figure 1 . f z s z l (mhz) (? ) ( ? ) 2110 0.68 ? j4.73 2.42 ? j2.08 2140 0.80 ? j4.94 2.67 ? j2.24 2170 0.96 ? j5.37 2.68 ? j2.24
BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 4 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor 7.3 test circuit fig 1. definition of transistor impedance 001aaf059 drain z l z s gate printed-circuit board (pcb): taconic rf-35; ? r = 3.5; thickness = 0.76 mm. see table 9 for list of components. fig 2. component layout for test circuit table 9. list of components for test circuit, see figure 2 . component description value remarks c1 multilayer ceramic chip capacitor 10 ? f, 50 v murata; smd 2220 c2 multilayer ceramic chip capacitor 47 pf atc100b c3, c4 multilayer ceramic ch ip capacitor 0.7 pf atc100b c5 multilayer ceramic chip capacitor 0.2 pf atc100b c6, c9 multilayer ceramic ch ip capacitor 12 pf atc100b c7, c10 multilayer ceramic chip capacitor 100 pf atc100b c8, c11 multilayer ceramic chip capacitor 100 pf atc800b c12, c13 electroly tic capacitor 470 ? f, 6 3 v c14 multilayer ceramic ch ip capacitor 33 pf atc100b r1 resistor 5.1 ? smd 0805

BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 5 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor 7.4 graphs 7.4.1 pulsed cw v ds = 28 v; i dq = 2400 ma; t p = 100 ? s; ? = 10 %. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz v ds = 28 v; i dq = 2400 ma; t p = 100 ? s; ? = 10 %. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 3. power gain as a function of output power; typical values fig 4. drain efficiency as a function of output power; typical values

BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 6 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor 7.4.2 is-95 v ds = 28 v; i dq = 2400 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz v ds = 28 v; i dq = 2400 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 5. power gain as a function of average output power; typical values fig 6. drain efficiency as a function of average output power; typical values v ds = 28 v; i dq = 2400 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz v ds = 28 v; i dq = 2400 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 7. adjacent channel power ratio (885 khz) as a function of average output power; typical values fig 8. adjacent channel power ratio (1980 khz) as a function of average output power; typical values

BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 7 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor 7.4.3 1-carrier w-cdma v ds = 28 v; i dq = 2400 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz v ds = 28 v; i dq = 2400 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 9. peak-to-average power ratio as a function of average output power; typical values fig 10. peak output power as a function of average output power; typical values

v ds = 28 v; i dq = 2400 ma. (1) f = 2112.5 mhz (2) f = 2140 mhz (3) f = 2167.5 mhz v ds = 28 v; i dq = 2400 ma. (1) f = 2112.5 mhz (2) f = 2140 mhz (3) f = 2167.5 mhz fig 11. power gain as a function of average output power; typical values fig 12. drain efficiency as a function of average output power; typical values

BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 8 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor 7.4.4 2-carrier w-cdma v ds = 28 v; i dq = 2400 ma. (1) f = 2112.5 mhz (2) f = 2140 mhz (3) f = 2167.5 mhz v ds = 28 v; i dq = 2400 ma. (1) f = 2112.5 mhz (2) f = 2140 mhz (3) f = 2167.5 mhz fig 13. peak-to-average power ratio as a function of average output power; typical values fig 14. input return loss as a function of average output power; typical values !" !" !" v ds = 28 v; i dq = 2400 ma; 5 mhz carrier spacing. (1) f = 2115 mhz (2) f = 2140 mhz (3) f = 2165 mhz v ds = 28 v; i dq = 2400 ma; 5 mhz carrier spacing. (1) f = 2115 mhz (2) f = 2140 mhz (3) f = 2165 mhz fig 15. power gain as a function of average output power; typical values fig 16. drain efficiency as a function of average output power; typical values

BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 9 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor v ds = 28 v; i dq = 2400 ma; 5 mhz carrier spacing. (1) f = 2115 mhz (2) f = 2140 mhz (3) f = 2165 mhz v ds = 28 v; i dq = 2400 ma; 10 mhz carrier spacing. (1) f = 2115 mhz (2) f = 2140 mhz (3) f = 2165 mhz fig 17. adjacent channel power ratio (5 mhz) as a function of average output power; typical values fig 18. adjacent channel power ratio (10 mhz) as a function of average output power; typical values v ds = 28 v; i dq = 2400 ma; 5 mhz carrier spacing. (1) f = 2115 mhz (2) f = 2140 mhz (3) f = 2165 mhz fig 19. input return loss as a function of average output power; typical values !" !" !"
BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 10 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor 8. package outline fig 20. package outline sot502b references outline version european projection issue date iec jedec jeita sot502b 07-05-09 12-05-02 0 5 10 mm scale earless flanged ceramic package; 2 leads sot502b a f b d u 2 l h q c 1 3 2 d 1 e d u 1 d e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 w 2 f 1.14 0.89 u 1 20.70 20.45 l 5.33 4.32 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.010 0.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions)
BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 11 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge is-95 interim standard 95 ldmos laterally diffused metal oxide semiconductor par peak-to-average ratio smd surface mounted device vswr voltage standing wave ratio w-cdma wideband code division multiple access table 11. revision history document id release date data sheet status change notice supersedes BLF8G22LS-270 v.3 20121220 product data sheet - BLF8G22LS-270 v.2 modifications: ? the status of this document has been changed to product data sheet. ? table 1 on page 1 : table has been updated. ? table 4 on page 2 : table has been updated. ? table 6 on page 3 : table has been updated. ? table 7 on page 3 : table has been updated. BLF8G22LS-270 v.2 20121203 preliminary data sheet - BLF8G22LS-270 v.1 BLF8G22LS-270 v.1 20121012 objective data sheet - -
BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 12 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF8G22LS-270 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 3 ? 20 december 2012 13 of 14 nxp semiconductors BLF8G22LS-270 power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLF8G22LS-270 power ldmos transistor ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 20 december 2012 document identifier: BLF8G22LS-270 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 3 7.2 impedance information . . . . . . . . . . . . . . . . . . . 3 7.3 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.4 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.4.1 pulsed cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.4.2 is-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.4.3 1-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 7 7.4.4 2-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 8 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 handling information. . . . . . . . . . . . . . . . . . . . 11 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 contact information. . . . . . . . . . . . . . . . . . . . . 13 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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